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Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN

Abstract : GaN based wide bandgap semiconductor materials nanostructures have a tremendous potential of applications for innovative optoelectronic devices emitting in the UV region (190-340nm). Thus, the feasibility of the nanoscale growth must be demonstrated. Selective Area Growth (SAG) extended to the nanoscale (NSAG for NanoSAG) is an excellent approach for growing semiconductor nanostructures. This technique is based on localized growth of the material on substrates partially covered by dielectric masks. NSAG technique allows the growth of highly mismatched materials because the density of dislocation is reduced thanks to singular stress relief mechanisms that occur at nanoscale. The first part of the work consists in the implementation of the GaN selective epitaxy on GaN template substrate at the micrometer and nanometer scales by Metal Organic Vapor Phase Epitaxy. In a second time, the NSAG technique is used for the growth of GaN nanostructures on SiC-6H substrate and AlN template substrate. The influence of the growth conditions and the mask pattern on the nanostructures shape is demonstrated using Scattering Electronic Microscopy and Atomic Force Microscopy. Fine structural analysis of the nanostructures is finally investigated using advanced characterization tools such as Transmission Electron Microscopy and X-rays nano-diffraction by synchrotron radiation
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https://hal.univ-lorraine.fr/tel-01752653
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  • HAL Id : tel-01752653, version 1

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Jérôme Martin. Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN. Autre [cond-mat.other]. Université Paul Verlaine - Metz, 2009. Français. ⟨NNT : 2009METZ027S⟩. ⟨tel-01752653⟩

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