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Electrical spin injection and detection in molybdenum disulfide multilayer channel

Abstract : Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS 2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS 2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS 2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresis-tance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS 2 channel with an in-plane spin polarization. The long spin diffusion length (approximately B235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
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Submitted on : Thursday, December 7, 2017 - 9:30:49 PM
Last modification on : Wednesday, October 26, 2022 - 1:36:06 PM
Long-term archiving on: : Thursday, March 8, 2018 - 12:56:06 PM


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Shiheng Liang, Huaiwen Yang, Pierre Renucci, Bingshan Tao, Piotr Laczkowski, et al.. Electrical spin injection and detection in molybdenum disulfide multilayer channel. Nature Communications, 2017, 8, pp.14947. ⟨10.1038/ncomms14947⟩. ⟨hal-01654269⟩



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