Electrical spin injection and detection in molybdenum disulfide multilayer channel

Abstract : Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS 2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS 2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS 2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresis-tance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS 2 channel with an in-plane spin polarization. The long spin diffusion length (approximately B235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
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Shiheng Liang, Huaiwen Yang, Pierre Renucci, Bingshan Tao, Piotr Laczkowski, et al.. Electrical spin injection and detection in molybdenum disulfide multilayer channel. Nature Communications, Nature Publishing Group, 2017, 8, pp.14947. ⟨10.1038/ncomms14947⟩. ⟨hal-01654269⟩

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