Electrical spin injection and detection in molybdenum disulfide multilayer channel
Résumé
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS 2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS 2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS 2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresis-tance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS 2 channel with an in-plane spin polarization. The long spin diffusion length (approximately B235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
Domaines
Autre [cond-mat.other]| Origine | Fichiers éditeurs autorisés sur une archive ouverte |
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