Electrical transport properties of black phosphorus based field-effect transistor with Au/Co/MgO tunneling contacts - Université de Lorraine Access content directly
Journal Articles Journal of Applied Physics Year : 2017

Electrical transport properties of black phosphorus based field-effect transistor with Au/Co/MgO tunneling contacts

Stéphane Mangin
Yuan Lu

Abstract

Black phosphorus (BP) has recently emerged as a promising two-dimensional direct bandgap semiconducting material. Here, we report the fabrication and the electrical transport measurements of the black phosphorus based field-effect transistor with the Au/Co/MgO as drain and source tunneling contacts. By modulating the back-gate voltage, the multilayer black phosphorus channel exhibits ambipolar characteristics (both n-type and p-type) and the conduction behavior can be switched from hole dominated to electron dominated transport region. In the hole dominated region, we have measured a minimum of Schottky barrier height of 37 meV for Au/Co/MgO contact on BP. Moreover, the transistor ON/OFF (Ion/Ioff) ratio is obtained as large as 107 at 20 K and 105 at 300 K. A systematic study of the temperature and the back-gate voltage dependent conduction properties has been performed to understand the modulation of band structure and the ambipolar behavior. The demonstration of high ON/OFF ratio and low Schottky barrier height by using Au/Co/MgO tunneling contacts reveals a promising potential for spintronics applications with multilayer black phosphorus field-effect transistor.
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Dates and versions

hal-02011640 , version 2 (08-02-2019)
hal-02011640 , version 1 (08-02-2019)

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Shiheng Liang, Huaiwen Yang, Abdelhak Djeffal, Bingshan Tao, Stefan Mc-Murtry, et al.. Electrical transport properties of black phosphorus based field-effect transistor with Au/Co/MgO tunneling contacts. Journal of Applied Physics, 2017, 122 (16), pp.164301. ⟨10.1063/1.5000524⟩. ⟨hal-02011640v2⟩
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