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Analysis of the dislocation contrasts obtained by electron channeling imaging using theoretical and practical considerations

Abstract : In Scanning Electron Microscope (SEM), Electron Channeling Contrast Imaging (ECCI) is an attractive technique that allows direct observations of crystalline defects on bulk samples [1]. ECCI takes advantage from the strong dependence between the backscattred electrons intensity and the crystal orientation relative to the incident electron beam. Defects, such as dislocations, can be imaged with a visibility of depth below the surface of about a hundred nanometers (the same order of magnitude of the thickness of a TEM thin foil). It has been shown that the channeling contrast generated by these linear defects is influenced by the modification of diffraction conditions caused by the lattice distortions around their core [2]. In this work, fundamental and experimental aspects of electron diffraction for characterizing dislocation by ECCI are reported. Interpretation of contrast in (g,-g) and its evolution along Kikuchi band are given. Experimentally, the potentiality of this technique is explored on several dislocation configurations in grained Interstitial-Free (IF) steel (Fe − 1 %Si) where a dislocation dipole is observed and fully characterized for the first time in SEM. References [1]Mansour, H., Guyon, J., Crimp, M.A., Gey, N., Beausira, B., Maloufi, N. Scripta. Mater. 84–85 (2014) 11–14. [2]Mansour, H., Crimp, M.A., Gey, N., Maloufi, N. Scripta. Mater. 109 (2015) 76–79. [3]Kriaa, H., Guitton, A., Maloufi, N. Submission in progress.
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https://hal.univ-lorraine.fr/hal-03043016
Contributor : Antoine Guitton Connect in order to contact the contributor
Submitted on : Monday, December 7, 2020 - 9:52:33 AM
Last modification on : Wednesday, November 3, 2021 - 8:56:33 AM

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  • HAL Id : hal-03043016, version 1

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Hana Kriaa, Antoine Guitton, Nabila Maloufi. Analysis of the dislocation contrasts obtained by electron channeling imaging using theoretical and practical considerations. Plasticité, 2017, Rennes, France. ⟨hal-03043016⟩

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