In Scanning Electron Microscope (SEM), Electron Channeling Contrast Imaging (ECCI) is an attractive technique that allows direct observations of crystalline defects on bulk samples, thin films or substrates [1-4]. ECCI takes advantage from the strong dependence between the backscattred electrons intensity and the crystal orientation relative to the incident electron beam. Defects, such as dislocations, can be imaged with a visibility of depth below the surface of about a hundred nanometers (the same order of magnitude of the thickness of a TEM thin foil or a thin layer deposited on a substrate). It has been shown that the channeling contrast generated by these linear defects is influenced by the modification of diffraction conditions caused by the lattice distortions around their core [5,6]. In this work, fundamental and experimental aspects of electron diffraction for characterizing dislocation by ECCI are reported. Interpretation of contrast in (g,-g) and its evolution along a Kikuchi band are given. Experimentally, the potentiality of the technique ECCI is explored on several dislocation configurations in grained Interstitial-Free (IF) steel (Fe − 1 %Si) where a dislocation dipole is observed and fully characterized for the first time in SEM [5]. References [1] H. Mansour, J. Guyon, M.A. Crimp, N. Gey, B. Beausir, N. Maloufi, Scripta. Mater. 84–85 (2014) 11–14. [2] G. Naresh-Kumar, B. Hourahine, P. R. Edwards, A. P. Day, A. Winkelmann, A. J. Wilkinson, P. J. Parbrook, G. England, and C. Trager-Cowan, Phys. Rev. Lett. 108, (2012) 135503 [3] H. Mansour, M.A. Crimp, N. Gey, N. Maloufi, Scripta. Mater. 109 (2015) 76–79. [4] A. Guitton, H. Kriaa, E. Bouzy, J. Guyon, N. Maloufi, Materials 11, 2 (2018) [5] H. Kriaa, A. Guitton, N. Maloufi, Scientific reports 7, (2017). [6] H. Kriaa, A. Guitton, N. Maloufi, Materials 18, 2019