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Analyse et étude de transistors nLDDMOSFETs de technologie 1.2 micromètres, et des effets induits par irradiations

Abstract : The reduction of electronics devices dimensions, produces a strong modification of their electrical characteristics and a high sensitivity to external agressions. In this work we present a study of lightly doped drain (LDD) nLDDMOSFET's of matra-mhs 1.2 um technology. This work contains two major parts : *the first part concerns an experimental study, based on conduction parameter evolution, and on the modification of the transistor body-drain junction parameters. A complementary study of MOS capacitors has been carried out in order to determine more technological parameters. A coherent characterization method of MOS transistor and their elements has been expanded. Properties degradation of body-drain junction in submicronic range have been analysed and related to dimensions reduction. * The second part presents a two-dimensional simulation of these divices, using two level simulation : a simulation with the 2D simulator ATHENA which provides a two-dimensional simulation of semiconductors processing. This simulation step requires a good choice of process parameters (ion implantation dose, energy, annealing condition...) A two-dimensional electrical behavior simulation with the simulator S PISCES 2B, based on the choice of physical models taken into account for these devices. Finally, this work presents a coherent characterization method of dimensions reductions effects and of electrical behavior degradation of these devices after radiation exposure. It gives a simulation methodology which made it possible to show the role of the double channel implantation (B and As) for the threshold voltage adjustement and substrate thichness influence. This work shows that the ionizing radiation and displacement damage can be characterized by the body-drain junction study. Gate bias and ionizing radiation have the same effects on conduction processes in this junction
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Eloi Blampain. Analyse et étude de transistors nLDDMOSFETs de technologie 1.2 micromètres, et des effets induits par irradiations. Autre. Université Paul Verlaine - Metz, 1997. Français. ⟨NNT : 1997METZ007S⟩. ⟨tel-01777195⟩



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