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Influence de l'insertion de bore et de phosphore sur les propriétés optiques et structurales des nanocristaux de silicium dans une matrice de silice

Abstract : In order to contribute to the in-depth understanding of doping at the nanoscale, we have studied the influence of the insertion of boron and phosphorus atoms on the optical and structural properties of silicon nanocrystals. Using the ultra-vacuum evaporation technique, we prepared silicon nanocrystals inserted in a silica matrix with two types of layers: thin films of silicon oxides SiO1.5 and SiO/SiO2 multilayers containing boron or phosphorus impurities with different and controlled concentrations. While phosphorus facilitates the demixing of silicon oxide, which has led to an increase in the size of silicon nanocrystals, boron seems to have no measurable influence on the appearance and growth of nanocrystals. The evolution of the photoluminescence of nanocrystals with doping has been explained by the existence of structural defects as well as by a passivating role of the phosphorus atoms. Finally, transmission electron microscopy and atomic tomographic probe techniques have shown that, unlike boron atoms, phosphorus atoms are preferentially located within nanocrystals.
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https://hal.univ-lorraine.fr/tel-03274111
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Submitted on : Tuesday, June 29, 2021 - 5:52:12 PM
Last modification on : Wednesday, June 30, 2021 - 3:34:47 AM

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  • HAL Id : tel-03274111, version 1

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Fatme Trad. Influence de l'insertion de bore et de phosphore sur les propriétés optiques et structurales des nanocristaux de silicium dans une matrice de silice. Physique [physics]. Université de Lorraine, 2021. Français. ⟨NNT : 2021LORR0012⟩. ⟨tel-03274111⟩

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